Thesis (Ph.D.), University of East Anglia, School of Physics, 1992.
Raman spectroscopy has become a widely used characterization tool in today's semiconductor research. In this chapter, we provide an introductory background to the physics of Raman scattering and discuss present-day applications of Raman spectroscopy in the field of compound semiconductor physics. Illustrative examples of Raman studies are given on a variety of topics such as crystal quality Author: Jordi Ibáñez, Ramon Cuscó. Characterising Semiconductors. Raman spectroscopy is ideal for studying semiconductor materials in electronics, transistors, solar cells, light emitting diodes and more. It’s a powerful analytical technique, well suited to characterising the homogeneity of source materials, to perform in demanding semiconductor applications. Nanowires (NWs) are filamentary crystals with diameters of tens of nanometers and lengths of few microns. Semiconductor NWs have recently attracted a great interest, because they are emerging as building blocks for novel nanoscale devices. Since physical properties are size dependent, NWs display novel properties with respect to their bulk counterparts. Raman scattering is a Author: Marta De Luca, Ilaria Zardo. Raman spectroscopy has a number of applications in various fields including material science, physics, chemistry, biology, geology, and medicine. This book illustrates necessary insight and guidance in the field of Raman spectroscopy with detailed figures and explanations. This presents deep understanding of new techniques from basic introduction to the advance level for scientists and.
Raman scattering is one of the most effective optical methods of studying vibrational spectrum of bulk semiconductors, thin films and nanostructures such as superlattices, nanowires, nanorods, and nanocrystals (NCs) or quantum dots. About this book Owing to its unique combination of high information content and ease of use, Raman spectroscopy, which uses different vibrational energy levels to excite molecules (as opposed to light spectra), has attracted much attention over the past fifteen years. Raman spectroscopy is a very well suited technique to determine both Ge fraction and strain in SiGe layers and Si cap layers. Moreover the possibility of using both UV and visible excitation lines on the same instrument is essential to study structures made up of a Silicon cap layer on top of a SiGe layer. II-VI semiconductors or classical. Why Raman spectroscopy? • Information on rotational and vibrational levels • Raman effect small but accessible by use of lasers • Complementary information to IR spectroscopy phomonuclear diatomic molecules, low frequency range • In situ analysis of organic and inorganic compounds • Analysis of aqueous solutions and solids (powders).
This book shows the electronic, optical and lattice-vibration properties of the two-dimensional materials which are revealed by the Raman spectroscopy. It consists Raman spectroscopy techniques, different kinds of two-dimensional materials and their physical properties. Characterization of II-VI semiconductor nanostructures by low wavenumber Raman- and four-wave-mixing spectroscopy IV, S., Ill., graph. Darst. (DE) Material Type: Document, Thesis/dissertation, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: Krisztina Babocsi. Raman spectroscopy is outside the scope of this book. For those who read through to the end, the book will provide a firm grounding, with appropriate references given, from which to approach more in-depth studies of specific aspects of Raman spectroscopy. In writing this book some difficult choices. Raman spectroscopy utilizing a microscope for laser excitation and Raman light collection offers that highest Raman light collection efficiencies. When properly designed, Raman microscopes allow Raman spectroscopy with very high lateral spatial resolution, minimal depth of field and the highest possible laser energy density for a given laser power.